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张利民

【来源:核学院 | 发布日期:2010-07-08 】     【选择字号:

 

姓名:张利民
职称:副教授
所在研究所:辐射物理与核材料研究所
通讯地址:甘肃省兰州市东岗西路199号,兰州大学核科学与技术学院,730000
电子邮件:zhanglm@lzu.edu.cn
 
研究方向:
 
1. 核能材料(SiC、玻璃陶瓷)辐照损伤
2. 氮化物半导体材料(GaN、InGaN、AlGaN)离子注入改性
 
 
教育简历(按时间倒序排序):
 
1. 2003/09-2008/06,兰州大学,核科学与技术学院,硕博连读研究生
2. 1999/09-2003/06,兰州大学,物理科学与技术学院,本科生
 
 
工作简历(按时间倒序排序):
 
1. 2012/05-至今,兰州大学,核科学与技术学院,副教授
2. 2014/06-2015/05,美国西北太平洋国家实验室,离子加速器实验室,访问学者
3. 2008/07-2012/05,兰州大学,核科学与技术学院,讲师
4. 2009/12-2012/03,中国科学院近代物理研究所,博士后
 
 
主讲课程:
 
    《核工程导论》、《核工程概论》(本科生专业基础课)
 
 
主要科研成果(按时间倒序排序。其中,本人姓名加粗显示,通讯作者姓名后加注上标“*”):
 
1. Limin Zhang*, Weilin Jiang*, Wensi Ai, Liang Chen, Chenlong Pan, Tieshan Wang, Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures, J. Am. Ceram. Soc. 2018, http://doi.org/10.1111/jace.15895.
2. W.S. Ai, L.M. Zhang*, W. Jiang, T.S. Wang, Raman study of InxGa1-xN (x=0.32-0.9) films irradiated with Xe ions at room temperature and 773 K, Nucl. Instrum. Methods B, 2018, 415:48-53.
3. Limin Zhang*, Weilin Jiang*, Wensi Ai, Liang Chen, Tieshan Wang, Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures, J. Nucl. Mater. 2018, 505:249-254.
4. L.M. Zhang*, W. Jiang, R.C. Fadanelli, W.S. Ai, J.X. Peng, T.S. Wang, C.H. Zhang, Microstructural response of InGaN to swift heavy ion irradiation, Nucl. Instrum. Methods B, 2016, 388:30-34.
5. Limin Zhang*, Weilin Jiang, Amila Dissanayake, Jinxin Peng, Wensi Ai, Jiandong Zhang, Zihua Zhu, Tieshan Wang, Vaithiyalingam Shutthanandan, Lattice damage and compositional changes in Xe ion irradiated InxGa1-xN (x =0.32?1.0) single crystals, J. Appl. Phys, 2016, 199: 244704.
6. Limin Zhang*, Weilin Jiang*, Amila Dissanayake, Tamas Varga, Jiandong Zhang, Zihua Zhu, Dehong Hu, Haiyan Wang, Charles H Henager Jr, Tieshan Wang, Grain growth of nanocrystalline 3C-SiC under Au ion irradiaton at elevated temperatures, J. Phys. D: Appl. Phys., 2016, 49: 035304.
7. L.M. Zhang*, R.C. Fadanelli, P. Hu, J.T. Zhao, T.S. Wang, C.H. Zhang, Structural damage in InGaN induced by MeV heavy ion irradiation, Nucl. Instrum. Methods B, 2015, 356-357: 53-56.
8. L.M. Zhang*, C.X. Li, J.T. Zhao, K.J. Yang, G.F. Zhang, T.S. Wang, C.H. Zhang, Study of radiation damage in InGaN and AlGaN films induced by 8.9 MeV Bi33+ ions, Nucl. Instrum. Methods B, 2013, 305: 1-4.
9. L.M. Zhang*, C.H. Zhang, C.X. Li, Y. Song, Y.F. Jin, T.S. Wang, Surface morphological and compositional changes of GaN films induced by swift heavy-ion irradiations, Eur. Phys. J. Appl. Phys., 2012, 59:30101.
10. L.M. Zhang, C.H. Zhang*, L.Q. Zhang, X. J. Jia, T.D. Ma, Y. Song, Y.T. Yang, B.S. Li, Y.F. Jin, Structural and optical study of irradiation effect in GaN epilayers induced by 308 MeV Xe ions, Nucl. Instrum. Methods B, 2011, 269: 1782-1785.
11. L.M. Zhang, C.H. Zhang*, L.Q. Zhang, X. J. Jia, L.H. Han, C.L. Xu, Y. Zhang, Y.F. Jin, HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3 MeV Ne and 5.3 MeV Kr ions, Nucl. Instrum. Methods B, 2011, 269: 1063-1066.